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DATA SHEET DATA SHEET
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.
5.5 MAX. (0.216 MAX.)
PACKAFE DIMENSIONS in millimeters (inches)
5.2 MAX. (0.204 MAX.)
FEATURES
* NF * Ga 1.2 dB TYP. 12 dB TYP. @f = 1.0 GHz @f = 1.0 GHz
0.5 (0.02)
1.77 MAX. (0.069 MAX.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 10 1.5 65 600 150 to +150
V V V mA mW
C C
1.27 (0.05)
2.54 (0.1)
1
2
3
1. Base 2. Emitter 3. Collector
EIAJ : SC-43B JEDEC : TO-92 IEC : PA33
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre 50 100 8 0.4
2
MIN.
TYP.
MAX. 1.0 1.0 250
UNIT
TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA
A A
GHz 0.9 pF dB dB 2.5 dB
VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IE = 7 mA, f = 1.0 GHz
S21e
MAG NF
9
11 13 1.2
hFE Classification
Class Marking hFE K K 50 to 250
Document No. P10359EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan
(c)
4.2 MAX. (0.165 MAX.)
14 MIN. (0.551 MIN.)
1984
2SC3582
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3 PT-Total Power Dissipation-mW Free air Cre-Feed-back Capacitance-pF f = 1.0 MHz 2 1000 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
1 0.7 0.5 0.3 0.2
500
0
50
100
150 0.1 1
TA-Ambient Temperature-C 2 3 5 7 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT 20 30
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 8 V 15
|S21e|2-Insertion Gain-dB
100 hFE-DC Current Gain
10
50
5
20
VCE = 8 V f = 1.0 GHz 10 0.5 1 5 10 50 0 0.5 1 5 10 50 70
IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 30 VCE = 8 V fT-Gain Bandwidth Product-GHz 20 MAG-Maximum Available Gain-dB |S21e|2-Insetion Gain -dB 16 20
IC-Collector Current-mA INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 8 V IC = 20 mA
MAG
10 7 5 3 2
12
|S21e|2
8
4
1 1
2
3 5 7 10 IC-Collector Current-mA
20
30
0 0.1
0.2
0.3 0.5 70. 1.0 f-Frequency-GHz
2.0 3.0
2
2SC3582
NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 VCE = 8 V f = 1.0 GHz
1
5
10
50 70
IC-Collector Current-mA
S-PARAMETER
VCE = 8.0 V, IC = 5.0 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11
0.668 0.425 0.294 0.214 0.167 0.132 0.098 0.073 0.071 0.070
VCE = 8.0 V, IC = 20 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
S11 45.8 61.5 73.2 79.4 79.5 79.8 75.2 72.0 63.7 60.6
S21
11.385 7.014 5.189 3.967 3.485 2.831 2.604 2.182 2.135 1.879
S21
128.9 103.7 88.6 75.4 64.7 57.0 48.5 39.1 31.0 21.6
S12
0.049 0.063 0.088 0.103 0.123 0.147 0.175 0.192 0.215 0.221
S12
83.5 76.3 68.5 64.5 60.8 55.9 50.7 47.9 44.2 38.0
S22
0.833 0.681 0.620 0.580 0.561 0.549 0.561 0.573 0.595 0.617
S22 26.9 31.1 36.0 40.8 46.3 53.4 60.3 69.1 71.8 78.0
S11
0.333 0.195 0.158 0.156 0.146 0.143 0.134 0.132 0.131 0.130
S11 51.4 49.2 44.3 41.0 35.8 30.7 25.8 22.3 20.0 17.8
S21
17.197 8.729 6.149 4.603 3.997 3.205 2.939 2.463 2.396 2.107
S21
107.7 89.7 78.8 68.7 60.4 54.1 46.7 38.1 30.7 22.1
S12
0.053 0.064 0.078 0.111 0.136 0.168 0.185 0.218 0.234 0.238
S12
97.5 90.1 80.3 70.0 64.2 58.1 53.2 47.3 41.3 36.5
S22
0.638 0.585 0.573 0.549 0.537 0.524 0.524 0.524 0.557 0.579
S22 29.7 31.8 35.0 38.2 42.4 57.1 55.4 62.0 68.5 74.8
3
2SC3582
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 8 V 200 MHz Step
8 0.0 2 0.4
0.9
1.0
0.8
1.2
9 0.0 1 0.4
0.10 0.40 110
0.7
0.11 0.39 100
0.12 0.38
0.13 0.37
90
0.14 0.36 80
0.15 0.35
70
1.4
0.1 6 0.3 4
0.6
0.
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C
0.
5
07 43 0. 0 13
1.6
12
0
6 00
1.8
0.1 0.3 7 3
0.2
0.
2.0
50
0. 18 32
19 0. 31 0.
( -Z-+-J-XTANCE CO ) MPO
N
T EN
0.4
0 0.2 0 0.3
40
O
WAVELEN G
0 1.
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9 1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
0.1
0.4
0.6
IC = 20 mA
0. 8
0
0.2
IC = 5 mA S11e
(
1.
E NC TA X - AC -J -O RE --Z
0.3
0.
4
E IV AT
0.
5
2.0
0.6
1.8
1.6
0.7
0.8
1.4
0.9
1.2
1.0
S21e-FREQUENCY CONDITION 90 120
VCE = 8 V
S12e-FREQUENCY
60
120
0.2 GHz 150 IC = 5 mA
IC = 20 mA IC = 20 mA 30 150 IC = 5 mA S12e
180
0
0.2 GHz 4 8
12
16
0 180 20
S21e -150 -30 -150 -30
-120 -90
-60
-120 -90
4
4.0
0.2 GHz IC = 5 mA 1.4 GHz
3. 0
)
10
S22e 0.2 GHz
5.0
20
IC = 20 mA
50
REACTANCE COMPONENT R ---- 0.2 ZO
1.4 GHz
20
(
)
0.
32
0.
18
-5
0
3 0.3 7
0.1
-6
4 0.3 6 0.1
0
0.35 0.15 -70
0.36 0.14 -80
1.0
0.8
0.8
0.6
0.6
0.37 0.13
0.4
0.4
0.2
0.2
-90
0.38 0.12
0.39 0.11 -100
0.40 0.10
-11
0
0.4 1 0.0 9
-1 2
0.4 0.0 2 8 0
NE G
-1
0. 4 0. 3 07 30
0.
4
0.6
3.
0.8
0
1 0.2 9 0.2 30
0.3
4.0
1.0
6.0
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.2
10
0.1
20
50
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0 .29 0.2 1 0.3 -3 0.2 0 0 0
-4 0
0. 0. 31 19
CONDITION 90
VCE = 8 V
60 2.0 GHz 30
0.2 GHz 0 0 0.05 0.10 0.15 0.20 0.25
-60
2SC3582
[MEMO]
5
2SC3582
[MEMO]
6
2SC3582
[MEMO]
7
2SC3582
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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